Моделирование технологии изготовления субмикронных КМОП СБИС с помощью систем TCAD
The features of technological processes for fabricating submicron CMOS VLSI circuits and their simulation are considered. Particular attention is given to modeling of the doping profile. Simulation of technological processes for submicron VLSI fabrication significantly reduces the cost of experimen...
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| Datum: | 2007 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.4.32 |
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| Назва журналу: | Technology and design in electronic equipment |