Моделирование технологии изготовления субмикронных КМОП СБИС с помощью систем TCAD

The features of technological processes for fabricating submicron CMOS VLSI circuits and their simulation are considered. Particular attention is given to modeling of the doping profile. Simulation of technological processes for submicron VLSI fabrication significantly reduces the cost of experimen...

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Bibliographic Details
Date:2007
Main Authors: Glushko, A. A., Rodionov, I. A., Makarchuk, V. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2007
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.4.32
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment