Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
Збережено в:
| Дата: | 2010 |
|---|---|
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2010
|
| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000349118 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859602900606517248 |
|---|---|
| author | S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro |
| author_facet | S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro |
| author_sort | S. V. Bunak |
| collection | Open-Science |
| first_indexed | 2025-07-22T15:14:48Z |
| format | Article |
| id | open-sciencenbuvgovua-100040 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T15:14:48Z |
| publishDate | 2010 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-1000402024-04-17T17:54:38Z Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349118 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title | Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_full | Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_fullStr | Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_full_unstemmed | Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_short | Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_sort | electrical properties of semiconductor structures with si nanoclusters in sio2 grown by high temperature annealing technology of siox layer, x<2 |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000349118 |
| work_keys_str_mv | AT svbunak electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT aabuyanin electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT vvilchenko electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT vvmarin electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT vpmelnik electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT imkhacevich electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT ovtretyak electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 AT agshkavro electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxamplt2 |