Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2

Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2

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Bibliographische Detailangaben
Datum:2010
Hauptverfasser: S. V. Bunak, A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, A. G. Shkavro
Format: Artikel
Sprache:English
Veröffentlicht: 2010
Schriftenreihe:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000349118
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-1000402024-04-17T17:54:38Z Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349118 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
S. V. Bunak
A. A. Buyanin
V. V. Ilchenko
V. V. Marin
V. P. Melnik
I. M. Khacevich
O. V. Tretyak
A. G. Shkavro
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
format Article
author S. V. Bunak
A. A. Buyanin
V. V. Ilchenko
V. V. Marin
V. P. Melnik
I. M. Khacevich
O. V. Tretyak
A. G. Shkavro
author_facet S. V. Bunak
A. A. Buyanin
V. V. Ilchenko
V. V. Marin
V. P. Melnik
I. M. Khacevich
O. V. Tretyak
A. G. Shkavro
author_sort S. V. Bunak
title Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
title_short Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
title_full Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
title_fullStr Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
title_full_unstemmed Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
title_sort electrical properties of semiconductor structures with si nanoclusters in sio2 grown by high temperature annealing technology of siox layer, x<2
publishDate 2010
url http://jnas.nbuv.gov.ua/article/UJRN-0000349118
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first_indexed 2025-07-22T15:14:48Z
last_indexed 2025-07-22T15:14:48Z
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