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Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2010
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000349118 |
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open-sciencenbuvgovua-1000402024-04-17T17:54:38Z Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349118 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| format |
Article |
| author |
S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro |
| author_facet |
S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro |
| author_sort |
S. V. Bunak |
| title |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_short |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_full |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_fullStr |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_full_unstemmed |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_sort |
electrical properties of semiconductor structures with si nanoclusters in sio2 grown by high temperature annealing technology of siox layer, x<2 |
| publishDate |
2010 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000349118 |
| work_keys_str_mv |
AT svbunak electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT aabuyanin electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT vvilchenko electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT vvmarin electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT vpmelnik electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT imkhacevich electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT ovtretyak electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 AT agshkavro electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerxlt2 |
| first_indexed |
2024-04-18T05:40:26Z |
| last_indexed |
2024-04-18T05:40:26Z |
| _version_ |
1796887719099498496 |