Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
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| Дата: | 2018 |
|---|---|
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2018
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000923036 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-28624 |
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dspace |
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open-sciencenbuvgovua-286242024-02-27T21:52:03Z Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000923036 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| format |
Article |
| author |
D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov |
| author_facet |
D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov |
| author_sort |
D. V. Savchenko |
| title |
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_short |
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_full |
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_fullStr |
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_full_unstemmed |
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_sort |
electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| publishDate |
2018 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000923036 |
| work_keys_str_mv |
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| first_indexed |
2024-03-30T08:22:43Z |
| last_indexed |
2024-03-30T08:22:43Z |
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