Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
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| Date: | 2018 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
2018
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| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000923036 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859507989962031104 |
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| author | D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov |
| author_facet | D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov |
| author_sort | D. V. Savchenko |
| collection | Open-Science |
| first_indexed | 2025-07-17T15:22:29Z |
| format | Article |
| id | open-sciencenbuvgovua-28624 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T15:22:29Z |
| publishDate | 2018 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-286242024-02-27T21:52:03Z Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000923036 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics D. V. Savchenko E. N. Kalabukhova B. D. Shanina N. T. Bagraev L. E. Klyachkin A. M. Malyarenko V. S. Khromov Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_full | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_fullStr | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_full_unstemmed | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_short | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_sort | electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000923036 |
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