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TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER

Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations at frequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ gradedgap semiconductors. The subject of this resear...

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Bibliographic Details
Date:	2023
Main Authors:	Storozhenko, I. P., Sanin, S. I.
Format:	Article
Language:	English
Published:	Видавничий дім «Академперіодика» 2023
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Online Access:	http://rpra-journal.org.ua/index.php/ra/article/view/1403
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Journal Title:	Radio physics and radio astronomy

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Radio physics and radio astronomy

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