Cover Image

TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER

Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations at frequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ gradedgap semiconductors. The subject of this resear...

Full description

Saved in:

Bibliographic Details
Date:	2023
Main Authors:	Storozhenko, I. P., Sanin, S. I.
Format:	Article
Language:	English
Published:	Видавничий дім «Академперіодика» 2023
Subjects:
Online Access:	http://rpra-journal.org.ua/index.php/ra/article/view/1403
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Radio physics and radio astronomy

Institution

Radio physics and radio astronomy

Similar Items

Terahertz oscillations in InN Gunn diodes with an active region length of 1 μm and with a graded GaInN layer
by: I. P. Storozhenko, et al.
Published: (2022)

GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)

Gunn Diode with Tunnel p++-n++-cathode
by: Arkusha, Yu. V., et al.
Published: (2013)

Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
by: Storozhenko, I. P.
Published: (2013)

A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARY
by: Zozulia, V. O., et al.
Published: (2024)

Gunn Diode with Induced Channel in Active Region
by: Arkusha, Yu. V., et al.
Published: (2013)

Influence of Temperature on Energy and Frequency Characteristics of mm-Waves Heterocathode Gunn Diodes
by: Arkusha, Yu. V., et al.
Published: (2013)

The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
by: Berrah, S., et al.
Published: (2006)

Gunn Diode Millimetre-Wave Frequency Shift Mixer-Amplifier
by: Plaksin, S. V., et al.
Published: (2013)

THE RESONANT SYSTEM OF A SUB-TERAHERTZ LOCAL OSCILLATOR
by: Kuzmichev, I. K., et al.
Published: (2023)

The resonant system of a sub-terahertz local oscillator
by: I. K. Kuzmichev, et al.
Published: (2022)

Metallic Cathode Contact for Gunn Diodes on Basis of Some Novel A3B5 Semiconductor Compounds
by: Arkusha, Yu. V.
Published: (2013)

Development and investigation of 2.39 μm-lasers for ecological monitoring
by: Bondarchuk, Ya.M., et al.
Published: (2004)

Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры
by: Yodgorova, D. M., et al.
Published: (2008)

Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀,₂Ga₀,₈As–n+GaAs–n⁰Ga₀,₉In₀,₁As–Au-структуры
by: Ёдгорова, Д.М., et al.
Published: (2008)

OPEN RESONATOR FOR SUMMATION OF POWERS IN SUB-TERAHERTZ AND TERAHERTZ FREQUENCIES
by: Kuz’michev, I. K., et al.
Published: (2017)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Action of Random Force on Gunn Domain
by: Bass, F. G., et al.
Published: (2012)

Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)

Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN
by: Ya. M. Olikh, et al.
Published: (2021)

DUAL-FREQUENCY TERAHERTZ LASER
by: Dzyubenko, M. I., et al.
Published: (2025)

Дослідження електричних та магнітних характеристик високотемпературних датчиків Холла на основі гетероструктури AlGaN/GaN
by: Stempitsky, V. R., et al.
Published: (2017)

Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods
by: Ya. Bomba, et al.
Published: (2021)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)

Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)

Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)

Спектры фоточувствительности поверхностно-барьерных структур Ni–n-GaAs
by: Melebayew, D., et al.
Published: (2008)

PROSPECTS OF THE USE OF GRADIENT GRATES IN THE LASERS OF TERAHERTZ RANGE
by: Dzyubenko, M. I., et al.
Published: (2018)

FREE-SPACE PROPAGATION OF TERAHERTZ LASER VORTEX BEAMS
by: Degtyarev, A. V., et al.
Published: (2024)

ON THE APPLICATION OF TERAHERTZ RADIATION IN VARIOUS FIELDS OF SCIENCE AND TECHNOLOGY
by: Karushkin, M. F., et al.
Published: (2025)

THE MINERAL COMPOSITION PECULIARITIES OF ROCK SALT WATER INSOLUBLE RESIDUE (FRACTION LESS THAN 1 ΜM) OF DNIEPER-DONETSK DEPRESSION SALT-BEARING FORMATION
by: Shekhunova, S. B.
Published: (2010)

Формирование резких границ раздела в эпитаксиальных структурах p+-AlGaAs/n-GaAs методом МОС-гидридной эпитаксии
by: Vakiv, N. M., et al.
Published: (2014)

Фазовый переход из диэлектрического состояния в фазу квантового эффекта Холла в гетероструктурах n-InGaAs/GaAs
by: Савельев, А.П., et al.
Published: (2017)

Исследование термометрических характеристик GaP-диодов p+–n-типа
by: Krasnov, V. A., et al.
Published: (2008)

MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
by: Onikienko, Y. O., et al.
Published: (2020)

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
by: Red’ko, S.M.
Published: (2015)

Polarisation of Graded Bundles
by: Bruce, A.J., et al.
Published: (2016)

TUNABLE AND BROADBAND DIFFERENTIAL PHASE SECTIONS IN TERAHERTZ FREQUENCY RANGE
by: Kosiak, O. S., et al.
Published: (2016)

Electron flow stability in the gas filled diode
by: Pashchenko, A., et al.
Published: (2017)