Рiст вiсмуту на Ge(111): еволюцiя морфологiї вiд нанокристалiв до плiвок
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbat...
Saved in:
| Date: | 2018 |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2018
|
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018514 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Ukrainian Journal of Physics |