Щільність дефектних станів і спектри дефектного поглинання a-Si:H
Spectral characteristics of the coefficient of defect absorption in amorphous hydrogenated silicon have been studied. The characteristics are determined, by analyzing the electron transitions occurring with the participation of the energy states of dangling bonds. It is shown that the principal role...
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| Date: | 2019 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2019
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| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018630 |
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| Journal Title: | Ukrainian Journal of Physics |