Особливостi формування рекомбiнацiйного струму в областi просторового заряду кремнiєвих сонячних елементiв
Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at...
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| Дата: | 2019 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2019
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019029 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at least an order of magnitude shorter than the charge-carrier bulk lifetime. This effect can be associated with a high defect concentration (and, therefore, a high deep-level concentration) in the SCR of examined Si structures. The parameters of deep centers that are responsible for the recombination in the SCR have been evaluated. |
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