Особливостi формування рекомбiнацiйного струму в областi просторового заряду кремнiєвих сонячних елементiв

Особливостi формування рекомбiнацiйного струму в областi просторового заряду кремнiєвих сонячних елементiв

Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at...

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Bibliographic Details
Date:2019
Main Authors: Sachenko, A. V., Kostylyov, V. P., Vlasiuk, V. M., Korkishko, R. M., Sokolovs’kyi, I. O., Chernenko, V. V.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
Subjects:
рекомбiнацiйний струм
область просторового заряду
кремнiєвi сонячнi елементи
глибокий рекомбiнацiйний рiвень
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019029
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
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Summary:Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at least an order of magnitude shorter than the charge-carrier bulk lifetime. This effect can be associated with a high defect concentration (and, therefore, a high deep-level concentration) in the SCR of examined Si structures. The parameters of deep centers that are responsible for the recombination in the SCR have been evaluated.

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