Вплив тиску аргону в камерi осадження на властивостi легованих алюмiнiєм плiвок ZnO, вирощених методом пошарового осадження при магнетронному розпиленнi

ZnO:Al films are deposited layer-by-layer onto silicon and glass substrates, by using the radio-frequency magnetron sputtering method at various argon pressures from 0.5 to 2 Pa in a deposition chamber. The influence of this pressure on the structure and the optical and electrical properties of ZnO:...

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Bibliographic Details
Date:2019
Main Authors: Popovych, V. I., Ievtushenko, A. I., Lytvyn, O. S., Romanjuk, V. R., Tkach, V. M., Baturyn, V. A., Karpenko, O. Y., Dranchuk, M. V., Klochkov, L. O., Dushejko, M. G., Karpyna, V. A., Lashkarov, G. V.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019095
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
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Summary:ZnO:Al films are deposited layer-by-layer onto silicon and glass substrates, by using the radio-frequency magnetron sputtering method at various argon pressures from 0.5 to 2 Pa in a deposition chamber. The influence of this pressure on the structure and the optical and electrical properties of ZnO:Al films is studied. Higher argon pressures are found to reduce the electron mobility in transparent conductive ZnO:Al films and to worsen their conducting properties owing to the free electron scattering by grain boundaries. An increase in the free electron scattering at higher argon pressures reduces the transparency of ZnO:Al films in the visible spectral range.
DOI:10.15407/ujpe61.04.0325