Дослiдження морфологiї шарiв p-CdHgTe структурованих ковзним опромiненням iонами срiбла

• Main Authors: Smirnov, A. B., Korchovyi, A. A., Krolevec, N. M., Morozhenko, V. A., Savkina, R. K., Udovytska, R. S., Sizov, F. F.
• Format: Article
• Language: English; Ukrainian
• Published: Publishing house "Academperiodika" 2019
• Subjects: наноструктурований шар; напiвпровiдник CdHgTe; метод iонної iмплантацiї; nanostructured layer; CdHgTe semiconductor; method of ion implantation; -
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019164

The “top–down” process of deposition of nanostructured layers on the surface of semiconductor materials by the ion implantation is studied. The irradiation of p-CdxHg1−xTe (x = 0.223)/CdZnTe heterostructures with 100-keV silver ions induces the formation of a nanostructure array on the specimen surface. The reduction of the ion beam incidence angle to 40∘ stimulates an ordering of nanostructures. The stabilization of the implantation-activated state of the system gives rise to the formation of the multifunctional metal oxide–semiconductor system Ag2O–p-CdxHg1−xTe (x = 0.2). The latter is a size-dependent response to the grazing beam irradiation and allows the combination of the functional properties of Ag2O oxide (Eg = 1.41 eV) and CdHgTe semiconductor (Eg = 0.123 eV) to be used as a basis for the creation of optical transducers and microwave grid arrays.