Дослiдження морфологiї шарiв p-CdHgTe структурованих ковзним опромiненням iонами срiбла
The “top–down” process of deposition of nanostructured layers on the surface of semiconductor materials by the ion implantation is studied. The irradiation of p-CdxHg1−xTe (x = 0.223)/CdZnTe heterostructures with 100-keV silver ions induces the formation of a nanostructure array on the specimen surf...
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| Datum: | 2019 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2019
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019164 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | The “top–down” process of deposition of nanostructured layers on the surface of semiconductor materials by the ion implantation is studied. The irradiation of p-CdxHg1−xTe (x = 0.223)/CdZnTe heterostructures with 100-keV silver ions induces the formation of a nanostructure array on the specimen surface. The reduction of the ion beam incidence angle to 40∘ stimulates an ordering of nanostructures. The stabilization of the implantation-activated state of the system gives rise to the formation of the multifunctional metal oxide–semiconductor system Ag2O–p-CdxHg1−xTe (x = 0.2). The latter is a size-dependent response to the grazing beam irradiation and allows the combination of the functional properties of Ag2O oxide (Eg = 1.41 eV) and CdHgTe semiconductor (Eg = 0.123 eV) to be used as a basis for the creation of optical transducers and microwave grid arrays. |
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