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Порушена симетрiя дзеркального вiдображення та дiамагнiтний коефiцiєнт носiїв, захоплених латеральними напiвпровiдниковими молекулами з квантовими точками

The theoretical study of the reflection asymmetry impact on the electron and hole localizations in self-assembled InGaAs/GaAs semiconductor lateral quantum dot molecules is made. The previously proposed mapping method is used to simulate the ground-state electron (hole) wave function and the energy...

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Bibliographic Details
Date:2019
Main Author: Voskoboynikov, O.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2019
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019273
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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