Особливості формування омічних контактів до n+-InN
We report about a study of the formation and current transport mechanism of ohmic contacts to n+-InN with electron concentrations of 2×1018, 8×1018, and 4×1019 cm−3. Pd/Ti/Au ohmic contacts are formed by the proposed approach of simultaneous magnetron metal deposition and in-situ temperature anneali...
Saved in:
| Date: | 2019 |
|---|---|
| Main Authors: | Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V. |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2019
|
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019292 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Ukrainian Journal of Physics |
Institution
Ukrainian Journal of PhysicsSimilar Items
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016)
by: P. O. Sai
Published: (2016)
Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)
by: Sai, P.O.
Published: (2016)
Методи створення і властивості омічних контактів до фосфіду індію (огляд)
by: Кудрик, Я.Я.
Published: (2015)
by: Кудрик, Я.Я.
Published: (2015)
Complex index of refraction of indium nitride InN
by: J. O. Akinlami, et al.
Published: (2012)
by: J. O. Akinlami, et al.
Published: (2012)
Complex index of refraction of indium nitride InN
by: Akinlami, J.O., et al.
Published: (2012)
by: Akinlami, J.O., et al.
Published: (2012)
Перспективы использования диодов Ганна на основе GaN, AlN и InN
by: Стороженко, И.П., et al.
Published: (2011)
by: Стороженко, И.П., et al.
Published: (2011)
The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
by: Berrah, S., et al.
Published: (2006)
by: Berrah, S., et al.
Published: (2006)
Terahertz oscillations in InN Gunn diodes with an active region length of 1 μm and with a graded GaInN layer
by: I. P. Storozhenko, et al.
Published: (2022)
by: I. P. Storozhenko, et al.
Published: (2022)
TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER
by: Storozhenko, I. P., et al.
Published: (2023)
by: Storozhenko, I. P., et al.
Published: (2023)
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Особливості механізмів утворення шаруватих індатів AᴵᴵLanInnO3n+1 (Aᴵᴵ = Sr, Ba) із систем спільнозакристалізованих нітратів
by: Тітов, Ю.О., et al.
Published: (2011)
by: Тітов, Ю.О., et al.
Published: (2011)
Current transport through ohmic contacts to indiume nitride with high defect density
by: Sai, P.O., et al.
Published: (2018)
by: Sai, P.O., et al.
Published: (2018)
Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)
by: A. E. Belyaev, et al.
Published: (2013)
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)
by: Belyaev, A.E., et al.
Published: (2013)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)
by: P. M. Romanets, et al.
Published: (2016)
Оценка ÑоÑтоÑÐ½Ð¸Ñ Ñ…Ñ€Ð¾Ð¼Ð°Ñ‚Ð¸Ð½Ð° в блаÑтомерах поÑле rриоконÑервированиÑ
by: Petrushko, M. P., et al.
Published: (2005)
by: Petrushko, M. P., et al.
Published: (2005)
Cтруктурные переÑтройки в клетках и их мембранах при длительном гипотермичеÑком хранении
by: Repin, N. V., et al.
Published: (2005)
by: Repin, N. V., et al.
Published: (2005)
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)
by: Romanets, P.M., et al.
Published: (2016)
Some Problems of Translations of Ch. Botev's "In the Inn”
by: V. A. Lavrenov
Published: (2002)
by: V. A. Lavrenov
Published: (2002)
Клітинно-тканинні препарати в лікуванні печінкової патології в екÑперименті
by: Subbota, N. P., et al.
Published: (2005)
by: Subbota, N. P., et al.
Published: (2005)
ДейÑтвие трифторперазина на гемолиз Ñритроцитов в гипертоничеÑких раÑтворах Ñлектролитов
by: Shpakova, N. M., et al.
Published: (2002)
by: Shpakova, N. M., et al.
Published: (2002)
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)
by: A. V. Sachenko, et al.
Published: (2012)
ВлиÑние длительноÑти Ñ…Ñ€Ð°Ð½ÐµÐ½Ð¸Ñ Ñ‚ÐºÐ°Ð½Ð¸ плаценты при 4oС на ультраÑтруктуру ворÑинчатого хориона
by: Repin, N. V., et al.
Published: (2002)
by: Repin, N. V., et al.
Published: (2002)
ВлиÑние амфифильных Ñоединений на чувÑтвительноÑть чаÑтично обезвоженных Ñритроцитов к гипертоничеÑкому ÑтреÑÑу
by: Orlova, N. V., et al.
Published: (2003)
by: Orlova, N. V., et al.
Published: (2003)
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: V. P. Kladko, et al.
Published: (2010)
by: V. P. Kladko, et al.
Published: (2010)
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: Kladko, V.P., et al.
Published: (2010)
by: Kladko, V.P., et al.
Published: (2010)
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)
by: Sachenko, A.V., et al.
Published: (2012)
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)
by: Belyaev, A.E., et al.
Published: (2007)
Ð¡Ñ‚Ñ€ÑƒÐºÑ‚ÑƒÑ€Ð½Ð°Ñ Ñ…Ð°Ñ€Ð°ÐºÑ‚ÐµÑ€Ð¸Ñтика ткани плаценты поÑле инкубации Ñ Ð”ÐœÐ¡Ðž
by: Govorukha, T. P., et al.
Published: (2006)
by: Govorukha, T. P., et al.
Published: (2006)
Особливості електричної ерозії контактів реле на основі срібла з добавками оксидів
by: Клименко, Б.В., et al.
Published: (2008)
by: Клименко, Б.В., et al.
Published: (2008)
Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Peculiarities of mechanisms formation of slab indates AIILanInnO3n+1 (AII = Sr, Ba) from the systems of co-crystallized nitrates
by: Yu. O. Titov, et al.
Published: (2011)
by: Yu. O. Titov, et al.
Published: (2011)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)
by: M. S. Boltovets, et al.
Published: (2010)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)
by: Boltovets, M.S., et al.
Published: (2010)
Особливості технології формування металічних контактів до дискретних ІЧ та ТГц приймачів випромінювання на основі епітаксійних шарів CdHgTe
by: Цибрій, З.Ф.
Published: (2019)
by: Цибрій, З.Ф.
Published: (2019)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)
by: A. V. Sachenko, et al.
Published: (2014)
ВлиÑние различных режимов криоконÑÐµÑ€Ð²Ð¸Ñ€Ð¾Ð²Ð°Ð½Ð¸Ñ Ð½Ð° некоторые характериÑтики Ñмбриональных нервных клеток
by: Goltsev, A. N., et al.
Published: (2003)
by: Goltsev, A. N., et al.
Published: (2003)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)
by: Sachenko, A.V., et al.
Published: (2014)
Similar Items
-
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019) -
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019) -
Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016) -
Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016) -
Методи створення і властивості омічних контактів до фосфіду індію (огляд)
by: Кудрик, Я.Я.
Published: (2015)