Взаємодія халькогенідних плівок As4Se96 з електронним пучком при використанні їх у ролі електронних резистів
The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam...
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| Date: | 2020 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2020
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| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019391 |
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| Journal Title: | Ukrainian Journal of Physics |