Харвестер відкритої науки НАН України

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

The radiation hardness of pulled silicon doped with germanium

von Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)