Харвестер відкритої науки НАН України

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings

von Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>

von Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge

von Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

von Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Features of piezoresistance in heavily doped n-silicon crystals

von Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

von Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

von Baranskii, P.I., Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Features of tensoresistance in single crystals of germanium and silicon with different dopants

von Baranskii, P.I., Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

von Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Radiation-induced effects in silicon

von Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.
Veröffentlicht in Вопросы атомной науки и техники (2019)

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

The radiation hardness of pulled silicon doped with germanium

von Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

von Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Veröffentlicht in Вопросы атомной науки и техники (2017)

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

von Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Veröffentlicht in Вопросы атомной науки и техники (2016)