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Features of piezoresistance in heavily doped n-silicon crystals by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

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Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals by Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2018)

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Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity by Baranskii, P.I., Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

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Features of tensoresistance in single crystals of germanium and silicon with different dopants by Baranskii, P.I., Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

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Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals by Gaidar, G.P., Baranskii, P.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)

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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Radiation-induced effects in silicon by Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.

Published in Вопросы атомной науки и техники (2019)

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Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon by Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.

Published in Вопросы атомной науки и техники (2017)

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Search Results - Gaidar, G.P.

Features of piezoresistance in heavily doped n-silicon crystals by Gaidar, G.P.

Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge by Gaidar, G.P.

Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type by Gaidar, G.P.

Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> by Gaidar, G.P.

On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors by Gaidar, G.P.

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings by Gaidar, G.P.

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals by Gaidar, G.P.

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity by Baranskii, P.I., Gaidar, G.P.

Features of tensoresistance in single crystals of germanium and silicon with different dopants by Baranskii, P.I., Gaidar, G.P.

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals by Gaidar, G.P., Baranskii, P.I.

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

Radiation-induced effects in silicon by Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon by Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.

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