Features of piezoresistance in heavily doped n-silicon crystals за авторством Gaidar, G.P.

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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge за авторством Gaidar, G.P.

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Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type за авторством Gaidar, G.P.

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Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> за авторством Gaidar, G.P.

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On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors за авторством Gaidar, G.P.

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Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings за авторством Gaidar, G.P.

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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals за авторством Gaidar, G.P.

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Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity за авторством Baranskii, P.I., Gaidar, G.P.

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Features of tensoresistance in single crystals of germanium and silicon with different dopants за авторством Baranskii, P.I., Gaidar, G.P.

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Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals за авторством Gaidar, G.P., Baranskii, P.I.

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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon за авторством Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

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Radiation-induced effects in silicon за авторством Gaidar, G.P., Pinkovska, M.B., Starchyk, M.I.

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Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons за авторством Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

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Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons за авторством Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

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Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon за авторством Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.

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