Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

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Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity by Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

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Low doses effect in GaP light-emitting diodes by Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.

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Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons by Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

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