Search Results - Lysenko, V.
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Analysis of multichannel optical rotary connectors based on the compensation operating principle with mirror and prismatic optical compensators (Part 1) by Shapar, V.M., Lysenko, V.S., Savchuk, A.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)Get full text
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Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation by Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)Get full text
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High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs by Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)Get full text
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Properties of SiGe/Si heterostructures fabricated by ion implantation technique by Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)Get full text
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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films by Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)Get full text
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Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions by Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)Get full text
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