SIMS study of deuterium distribution and thermal stability in ZMR SOI structures von Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.

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Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers von Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.

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An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications von Houk, Yu., Iniguez, B., Flandre, D., Nazarov, A.

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The advancement of silicon-on-insulator (SOI) devices and their basic properties von Rudenko, T.E., Nazarov, A.N., Lysenko, V.S.

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The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures von Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.

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Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures von Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.

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Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs von Rudenko, T., Nazarov, A., Kilchytska, V., Flandre, D., Popov, V., Ilnitsky, M., Lysenko, V.

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Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation von Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.

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Atomic Structure in the Vicinity of Nanovoids and Features of These Defects von Germanov, A.B., Ershova, I.V., Kislitskaya, E.V., Nazarov, A.V., Zaluzhnyi, A.G.

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Hall ion source with ballistic and magnetic beam focusing von Bizyukov, A.A., Girka, A.I., Sereda, K.N., Nazarov, A.V., Romaschenko, E.V.

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Emission characteristics and potential of macroparticle in beam-plasma discharge von Bizyukov, A.A., Romaschenko, E.V., Sereda, K.N., Chibisov, A.D., Nazarov, A.V.

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Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films von Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.

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Modeling of grain subdivision during severe plastic deformation by VPSC method combined with disclination analysis von Nazarov, A.A., Enikeev, N.A., Romanov, A.E., Orlova, T.S., Alexandrov, I.V., Beyerlei, n I.J.

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Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment von Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.

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High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs von Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films von Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric von Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.

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Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties von Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.

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Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.

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Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.

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