Харвестер відкритої науки НАН України

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

von Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

von Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

von Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

von Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

von Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films

von Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

von Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

von Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

von Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

von Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

von Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

von Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

von Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

von Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)