Open Science Harvester of NAS of Ukraine

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

by Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

by Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

by Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

by Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

by Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films

by Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

by Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

by Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

by Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

by Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

by Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

by Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

by Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

by Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

by Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

by Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)