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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient von Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)Volltext
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