Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field von Sachenko, A.V., Gorban, A.P.

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Excitonic effects in band-edge luminescence of semiconductors at room temperatures von Sachenko, A.V., Kryuchenko, Yu.V.

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On the collection of photocurrent in solar cells with a contact grid von Sachenko, A.V., Gorban, A.P.

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Conversion efficiency in silicon solar cells with spatially non-uniform doping von Sachenko, A.V., Prima, N.A., Gorban, A.P.

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Effect of emitter proprties on the conversion efficiency of silicon solar cells von Gorban, A.P., Kostylyov, V.P., Sachenko, A.V.

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Exciton-enhanced recombination in silicon at high concentrations of charge carriers von Sachenko, A.V., Gorban, A.P., Kostylyov, V.P.

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Photoconductivity relaxation and electron transport in macroporous silicon structures von Karachevtseva, L.A., Onyshchenko, V.F., Sachenko, A.V.

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Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) von Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

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Особливості фотоефекту в структурах макропористого кремнію von Karachevtseva, L. A., Onyshchenko, V. F., Sachenko, A. V.

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Lateral multijunction photovoltaic cells von Sachenko, A.V., Kulish, M.R., Sokolovskyi, I.O., Kostylyov, V.P.

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Characteristics of confined exciton states in silicon quantum wires von Korbutyak, D.V., Kryuchenko, Yu.V., Kupchak, I.M., Sachenko, A.V.

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A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures von Sachenko, A.V., Kryuchenko, Yu.V., Manoilov, E.G., Kaganovich, E.B.

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Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon von Gorban, A.P., Sachenko, A.V., Kostylyov, V.P., Prima, N.A.

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Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures von Sachenko, A.V., Sokolovskyi, I.O., Kazakevitch, A., Shkrebtii, A.I., Gaspari, F.

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New formalism for self-consistent parameters optimization of highly efficient solar cells von Sachenko, A.V., Kostylyov, V.P., Kulish, M.R., Sokolovsky, L.O., Shkrebtii, A.I.

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Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features von Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.

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The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes von Sachenko, A.V., Kostylyov, V.P., Vlasiuk, V.M., Sokolovskyi, I.O., Evstigneev, M.A.

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Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator von Shkrebtii, A.I., Sachenko, A.V., Sokolovskyi, I.O., Kostylyov, V.P., Kulish, M.R.

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Photoconverter with luminescent concentrator. Matrix material von Kulish, M.R., Kostylyov, V.P., Sachenko, A.V., Sokolovskyi, I.O., Shkrebtiy, A.I.

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Influence of the quantum dots' bandgap and their dispersion on the loss of luminescent quanta von Kulish, M.R., Kostylyov, V.P., Sachenko, A.V., Sokolovskyi, I.O., Shkrebtii, A.I.

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