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1

Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers

by Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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2

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist

by Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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3

Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures

by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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4

Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures

by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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5

Raman spectra of Ag- and Cu- photodoped chalcogenide films

by Stronski, A.V., Vlcek, M., Stetsun, A.I., Sklenar, A., Shepeliavyi, P.E.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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6

Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication

by Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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7

Investigation of synthesis peculiarities inherent to computer-generated rainbow holograms of 3D images

by Girnyk, V.I., Kostyukevich, S.A., Shepeliavyi, P.E., Kononov, A.V., Borisov, I.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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8

Polarization conversion effect in obliquely deposited SiOx films

by Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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9

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix

by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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10

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device

by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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11

Paramagnetic defects related to photoluminescence in SiOx films

by Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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12

The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures

by Petrov, V. V., Kryuchуn, A. A., Rubish, V. M., Kostyukevуch, S. A., Shepeliavyi, P. E.
Published 2020

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13

Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices

by Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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14

Photostimulated etching of germanium chalcogenide films

by Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

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15

Optical study of thermally induced phase separation in evaporated SiOx films

by Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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16

$Recording of high efficiency diffraction gratings by He-Ne laser$

Recording of high efficiency diffraction gratings by He-Ne laser

by Min'ko, V.I., Shepeliavyi, P.E., Dan'ko, V.A., Romanenko, P.F., Litvin, O.S., Indutnyy, I.Z.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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17

High-speed optical recording in vitreous chalcogenide thin films

by Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E., Kostyukevych, K.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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18

Optical recording of information pits in thin layers of chalcogenide semiconductors

by Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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19

Вплив обробки у парах HF на структуру та люмінесцентні властивості поруватих Si/SiОx нанокомпозитів

by Dan’ko, V.A., Zlobin, S.O., Indutnyi, I.Z., Lisovskyy, I.P., Litovchenko, L.G., Michailovska, K.V., Shepeliavyi, P.E.
Published 2025

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20

Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

by Dan’ko, V.A., Bratus, V.Ya., Indutnyi, I.Z., Lisovskyy, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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