Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers von Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.

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Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist von Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

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Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication von Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.

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Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures von Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures von Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

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Raman spectra of Ag- and Cu- photodoped chalcogenide films von Stronski, A.V., Vlcek, M., Stetsun, A.I., Sklenar, A., Shepeliavyi, P.E.

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Investigation of synthesis peculiarities inherent to computer-generated rainbow holograms of 3D images von Girnyk, V.I., Kostyukevich, S.A., Shepeliavyi, P.E., Kononov, A.V., Borisov, I.S.

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Polarization conversion effect in obliquely deposited SiOx films von Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

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Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix von Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

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Paramagnetic defects related to photoluminescence in SiOx films von Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.

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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device von Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.

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The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures von Petrov, V. V., Kryuchуn, A. A., Rubish, V. M., Kostyukevуch, S. A., Shepeliavyi, P. E.

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Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices von Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

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Recording of high efficiency diffraction gratings by He-Ne laser von Min'ko, V.I., Shepeliavyi, P.E., Dan'ko, V.A., Romanenko, P.F., Litvin, O.S., Indutnyy, I.Z.

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Optical study of thermally induced phase separation in evaporated SiOx films von Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.

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Photostimulated etching of germanium chalcogenide films von Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.

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High-speed optical recording in vitreous chalcogenide thin films von Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E., Kostyukevych, K.V.

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Optical recording of information pits in thin layers of chalcogenide semiconductors von Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.

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Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment von Dan’ko, V.A., Bratus, V.Ya., Indutnyi, I.Z., Lisovskyy, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E.

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Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films von Lisovskyy, I.P., Litovchenko, V.G., Zlobin, S.O., Voitovych, M.V., Khatsevich, I.M., Indutnyy, I.Z., Shepeliavyi, P.E., Kolomys, O.F.

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