Search Results - Slipokurov, V.

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  1. 1
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    Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes by Kudryk, Ya.Ya., Slipokurov, V.S.

    Published 2019
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  2. 2
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    Оже-рекомбінація в полярних InGaN/GaN квантових ямах by Zinovchuk, A.V., Slipokurov, V.S.

    Published 2025

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  3. 3
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    Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.

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  4. 4
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    Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.

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  5. 5
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    Флуктуації п’єзоелектричної поляризації в квантових ямах на основі III-нітридів by Zinovchuk, A.V., Stepanchikov, D.A., Vasylieva, R.Yu., Slipokurov, V.S.

    Published 2023

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  6. 6
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    Моделювання механізмів транспорту носіїв заряду в HgCdTe та InSb фотодіодах на ділянку спектра 3–5 мкм by Tetyorkin, V., Tsybrii, Z., Slipokurov, V., Yevmenova, A., Andrieieva, K., Kosulya, O.

    Published 2025

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  7. 7
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    Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range by Zorenko, A.V., Bychok, A.V., Shynkarenko, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

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  8. 8
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    Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics by Kudryk, Ya.Ya., Shynkarenko, V.V., Slipokurov, V.S., Bigun, R.I., Kudryk, R.Ya.

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  9. 9
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    Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes by Romanets, P.M., Konakova, R.V., Boltovets, M.S., Basanets, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

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  10. 10
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    Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes by Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.

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  11. 11
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    Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP by Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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  12. 12
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    Ohmic contacts based on Pd to indium phosphide Gunn diodes by Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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