Open Science Harvester of NAS of Ukraine

Оже-рекомбінація в полярних InGaN/GaN квантових ямах

by Zinovchuk, A.V., Slipokurov, V.S.
Published 2025

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

by Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Флуктуації п’єзоелектричної поляризації в квантових ямах на основі III-нітридів

by Zinovchuk, A.V., Stepanchikov, D.A., Vasylieva, R.Yu., Slipokurov, V.S.
Published 2023

Моделювання механізмів транспорту носіїв заряду в HgCdTe та InSb фотодіодах на ділянку спектра 3–5 мкм

by Tetyorkin, V., Tsybrii, Z., Slipokurov, V., Yevmenova, A., Andrieieva, K., Kosulya, O.
Published 2025

Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics

by Kudryk, Ya.Ya., Shynkarenko, V.V., Slipokurov, V.S., Bigun, R.I., Kudryk, R.Ya.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range

by Zorenko, A.V., Bychok, A.V., Shynkarenko, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes

by Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

by Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Ohmic contacts based on Pd to indium phosphide Gunn diodes

by Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)