Харвестер відкритої науки НАН України

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

за авторством Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Contacts for silicon IMPATT and pick-off diodes

за авторством Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

за авторством Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)