Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines von Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

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Radiation hardness of AlAs/GaAs-based resonant tunneling diodes von Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.

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Contacts for silicon IMPATT and pick-off diodes von Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.

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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals von Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.

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