Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Опубліковано 2002

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Опубліковано 2001

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

за авторством Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.
Опубліковано 1999

Contacts for silicon IMPATT and pick-off diodes

за авторством Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Опубліковано 2000

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

за авторством Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Опубліковано 2000