An intrinsic physical content of “single photon power” − (hν∙Δν) von Salkov, E.A., Svechnikov, G.S.

Volltext

On thermal emission of small-sized radiator von Salkov, E.A., Svechnikov, G.S.

Volltext

New method for estimating the refractive index of optical materials in spectrally selective elements von Manko, A.A., Svechnikov, G.S.

Volltext

A priori probabilistic model for the reliability of an "organised structure" von Sal'kov, E.A., Svechnikov, G.S.

Volltext

Reliability of AC thick-film electroluminescent lamps von Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.

Volltext

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects von Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.

Volltext

Polar properties and local piezoelectric response of ferroelectric nanotubes von Morozovska, A.N., Svechnikov, G.S., Shiskin, E.I., Shur, V.Y.

Volltext

Nanocrystalline silicon carbide films for solar cells von Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.

Volltext

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Volltext

3C-6H transformation in heated cubic silicon carbide 3C-SiC von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Volltext

Flexible electroluminescent panels von Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.

Volltext

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide von Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.

Volltext

Nanostructures in lightly doped silicon carbide crystals with polytypic defects von Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.

Volltext

Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals von Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.

Volltext

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Volltext

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Volltext

Nanograin boundaries and silicon carbide photoluminescence von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Volltext

Silicon carbide phase transition in as-grown 3C-6H polytypes junction von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.

Volltext

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface von Tatyanenko, N.P., Roshchina, N.N., Gromashevskii, V.L., Svechnikov, G.S., Zavyalova, L.V., Snopok, B.A.

Volltext

Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures von Svechnikov, G.S., Zavyalova, L.V., Roshchina, N.N., Prokopenko, I.V., Berezhinsky, L.I., Khomchenko, V.S., Litvin, O.S.

Volltext