An intrinsic physical content of “single photon power” − (hν∙Δν) von Salkov, E.A., Svechnikov, G.S.

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On thermal emission of small-sized radiator von Salkov, E.A., Svechnikov, G.S.

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Some properties of extremely restricted thermal radiation beams von Salkov, E.A., Svechnikov, G.S.

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New method for estimating the refractive index of optical materials in spectrally selective elements von Manko, A.A., Svechnikov, G.S.

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A priori probabilistic model for the reliability of an "organised structure" von Sal'kov, E.A., Svechnikov, G.S.

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Reliability of AC thick-film electroluminescent lamps von Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.

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Локальний електромеханічний відгук тонких плівок напівпровідників-іоніків von Morozovska, A.N., Svechnikov, G.S., Derkach, K.V.

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Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects von Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.

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Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations von Morozovska, A.N., Svechnikov, G.S., Shishkin, E.I., Shur, V.Y.

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Polar properties and local piezoelectric response of ferroelectric nanotubes von Morozovska, A.N., Svechnikov, G.S., Shiskin, E.I., Shur, V.Y.

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Nanocrystalline silicon carbide films for solar cells von Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.

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Characterization of nano-bio silicon carbide von Vlaskina, S.I., Mishinova, G.N., Shaginyan, I.L., Smertenko, P.S., Svechnikov, G.S.

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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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3C-6H transformation in heated cubic silicon carbide 3C-SiC von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Flexible electroluminescent panels von Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.

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Boron, aluminum, nitrogen, oxygen impurities in silicon carbide von Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.

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Nanostructures in lightly doped silicon carbide crystals with polytypic defects von Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.

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Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals von Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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