Харвестер відкритої науки НАН України

On thermal emission of small-sized radiator

за авторством Salkov, E.A., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

New method for estimating the refractive index of optical materials in spectrally selective elements

за авторством Manko, A.A., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

An intrinsic physical content of “single photon power” − (hν∙Δν)

за авторством Salkov, E.A., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Some properties of extremely restricted thermal radiation beams

за авторством Salkov, E.A., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

A priori probabilistic model for the reliability of an "organised structure"

за авторством Sal'kov, E.A., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

Reliability of AC thick-film electroluminescent lamps

за авторством Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Локальний електромеханічний відгук тонких плівок напівпровідників-іоніків

за авторством Morozovska, A.N., Svechnikov, G.S., Derkach, K.V.
Опубліковано 2022

Polar properties and local piezoelectric response of ferroelectric nanotubes

за авторством Morozovska, A.N., Svechnikov, G.S., Shiskin, E.I., Shur, V.Y.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

за авторством Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Nanocrystalline silicon carbide films for solar cells

за авторством Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations

за авторством Morozovska, A.N., Svechnikov, G.S., Shishkin, E.I., Shur, V.Y.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide

за авторством Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals

за авторством Machulin, V.F., Motsnyi, F.V., Peresh, E.Yu., Smolanka, O.M., Svechnikov, G.S.
Опубліковано в: Физика низких температур (2004)

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Flexible electroluminescent panels

за авторством Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

3C-6H transformation in heated cubic silicon carbide 3C-SiC

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)