Харвестер відкритої науки НАН України

Mechanism of 6H-3C transformation in SiC

von Vlaskina, S.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Silicon carbide LED

von Vlaskina, S.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

von Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Nanocrystalline silicon carbide films for solar cells

von Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide

von Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Flexible electroluminescent panels

von Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

3C-6H transformation in heated cubic silicon carbide 3C-SiC

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Electrophysical сharacteristics of LEDs based on GaN epitaxial films

von Oleksenko, P.Ph., Sukach, G.A., Smertenko, P.S., Vlaskina, S.I., Bogoslovskaya, A.B., Spichak, I.O., Shin, D.H.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Silicon carbide defects and luminescence centers in current heated 6H-SiC

von Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)