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Silicon carbide LED by Vlaskina, S.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Mechanism of 6H-3C transformation in SiC by Vlaskina, S.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects by Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Nanocrystalline silicon carbide films for solar cells by Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

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Characterization of nano-bio silicon carbide by Vlaskina, S.I., Mishinova, G.N., Shaginyan, I.L., Smertenko, P.S., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2020)

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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

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3C-6H transformation in heated cubic silicon carbide 3C-SiC by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Flexible electroluminescent panels by Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Boron, aluminum, nitrogen, oxygen impurities in silicon carbide by Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Nanostructures in lightly doped silicon carbide crystals with polytypic defects by Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Nanograin boundaries and silicon carbide photoluminescence by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)

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Silicon carbide phase transition in as-grown 3C-6H polytypes junction by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

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Electrophysical сharacteristics of LEDs based on GaN epitaxial films by Oleksenko, P.Ph., Sukach, G.A., Smertenko, P.S., Vlaskina, S.I., Bogoslovskaya, A.B., Spichak, I.O., Shin, D.H.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

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Silicon carbide defects and luminescence centers in current heated 6H-SiC by Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Search Results - Vlaskina, S.I.

Silicon carbide LED by Vlaskina, S.I.

Mechanism of 6H-3C transformation in SiC by Vlaskina, S.I.

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects by Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.

Nanocrystalline silicon carbide films for solar cells by Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.

Characterization of nano-bio silicon carbide by Vlaskina, S.I., Mishinova, G.N., Shaginyan, I.L., Smertenko, P.S., Svechnikov, G.S.

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

3C-6H transformation in heated cubic silicon carbide 3C-SiC by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Flexible electroluminescent panels by Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide by Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.

Nanostructures in lightly doped silicon carbide crystals with polytypic defects by Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Nanograin boundaries and silicon carbide photoluminescence by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

Silicon carbide phase transition in as-grown 3C-6H polytypes junction by Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.

Electrophysical сharacteristics of LEDs based on GaN epitaxial films by Oleksenko, P.Ph., Sukach, G.A., Smertenko, P.S., Vlaskina, S.I., Bogoslovskaya, A.B., Spichak, I.O., Shin, D.H.

Silicon carbide defects and luminescence centers in current heated 6H-SiC by Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

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