Харвестер відкритої науки НАН України

Mechanism of 6H-3C transformation in SiC

за авторством Vlaskina, S.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Silicon carbide LED

за авторством Vlaskina, S.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

за авторством Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Nanocrystalline silicon carbide films for solar cells

за авторством Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide

за авторством Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Flexible electroluminescent panels

за авторством Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

3C-6H transformation in heated cubic silicon carbide 3C-SiC

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

за авторством Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Electrophysical сharacteristics of LEDs based on GaN epitaxial films

за авторством Oleksenko, P.Ph., Sukach, G.A., Smertenko, P.S., Vlaskina, S.I., Bogoslovskaya, A.B., Spichak, I.O., Shin, D.H.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Silicon carbide defects and luminescence centers in current heated 6H-SiC

за авторством Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2004)