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Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals

It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor substrate. Sheet resistance measurements of the InSe oxide film in dependence...

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Bibliographic Details
Main Authors: Katerynchuk, V.M., Kovalyuk, Z.D.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117651
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