Silicon carbide defects and luminescence centers in current heated 6H-SiC

At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly u...

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Дата:	2010
Автори:	Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.
Формат:	Стаття
Мова:	English
Опубліковано:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:	Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:	http://dspace.nbuv.gov.ua/handle/123456789/117702
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Silicon carbide defects and luminescence centers in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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spelling	irk-123456789-1177022017-05-27T03:04:38Z Silicon carbide defects and luminescence centers in current heated 6H-SiC Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix. 2010 Article Silicon carbide defects and luminescence centers in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf http://dspace.nbuv.gov.ua/handle/123456789/117702 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
description	At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix.
format	Article
author	Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A.
spellingShingle	Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. Silicon carbide defects and luminescence centers in current heated 6H-SiC Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet	Lee, S.W. Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A.
author_sort	Lee, S.W.
title	Silicon carbide defects and luminescence centers in current heated 6H-SiC
title_short	Silicon carbide defects and luminescence centers in current heated 6H-SiC
title_full	Silicon carbide defects and luminescence centers in current heated 6H-SiC
title_fullStr	Silicon carbide defects and luminescence centers in current heated 6H-SiC
title_full_unstemmed	Silicon carbide defects and luminescence centers in current heated 6H-SiC
title_sort	silicon carbide defects and luminescence centers in current heated 6h-sic
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate	2010
url	http://dspace.nbuv.gov.ua/handle/123456789/117702
citation_txt	Silicon carbide defects and luminescence centers in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ.
series	Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed	2023-10-18T20:30:25Z
last_indexed	2023-10-18T20:30:25Z
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Silicon carbide defects and luminescence centers in current heated 6H-SiC

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