Boron, aluminum, nitrogen, oxygen impurities in silicon carbide
Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during 2 h at 1700 °C, with aluminum and silicon oxide powder during 2 h, and with...
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| Дата: | 2007 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117865 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Boron, aluminum, nitrogen, oxygen impurities in silicon carbide / S.I. Vlaskina, V.I. Vlaskin, S.A. Podlasov, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 21-25. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117865 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1178652017-05-28T03:02:29Z Boron, aluminum, nitrogen, oxygen impurities in silicon carbide Vlaskina, S.I. Vlaskin, V.I. Podlasov, S.A. Rodionov, V.E. Svechnikov, G.S. Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during 2 h at 1700 °C, with aluminum and silicon oxide powder during 2 h, and with boron oxide and aluminum during 0.5 h. Electrical characterization of the silicon carbide samples was done by the Hall effect measurements using the square van der Pauw method to determine the sheet resistance, mobility, and free carrier concentration. The model of deep donor level as a complex of nitrogen atom replacing carbon with adjacent silicon vacancy is suggested. 2007 Article Boron, aluminum, nitrogen, oxygen impurities in silicon carbide / S.I. Vlaskina, V.I. Vlaskin, S.A. Podlasov, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 21-25. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 85.60.Y http://dspace.nbuv.gov.ua/handle/123456789/117865 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Diffusion of boron, aluminum, and oxygen was conducted at temperatures
1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely
method annealed in oxygen during 2 h at 1700 °C, in argon during 2 h at 1700 °C, with
aluminum and silicon oxide powder during 2 h, and with boron oxide and aluminum
during 0.5 h. Electrical characterization of the silicon carbide samples was done by the
Hall effect measurements using the square van der Pauw method to determine the sheet
resistance, mobility, and free carrier concentration. The model of deep donor level as a
complex of nitrogen atom replacing carbon with adjacent silicon vacancy is suggested. |
| format |
Article |
| author |
Vlaskina, S.I. Vlaskin, V.I. Podlasov, S.A. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Vlaskin, V.I. Podlasov, S.A. Rodionov, V.E. Svechnikov, G.S. Boron, aluminum, nitrogen, oxygen impurities in silicon carbide Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Vlaskin, V.I. Podlasov, S.A. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
Boron, aluminum, nitrogen, oxygen impurities in silicon carbide |
| title_short |
Boron, aluminum, nitrogen, oxygen impurities in silicon carbide |
| title_full |
Boron, aluminum, nitrogen, oxygen impurities in silicon carbide |
| title_fullStr |
Boron, aluminum, nitrogen, oxygen impurities in silicon carbide |
| title_full_unstemmed |
Boron, aluminum, nitrogen, oxygen impurities in silicon carbide |
| title_sort |
boron, aluminum, nitrogen, oxygen impurities in silicon carbide |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117865 |
| citation_txt |
Boron, aluminum, nitrogen, oxygen impurities in silicon carbide / S.I. Vlaskina, V.I. Vlaskin, S.A. Podlasov, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 21-25. — Бібліогр.: 24 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:30:51Z |
| last_indexed |
2023-10-18T20:30:51Z |
| _version_ |
1796150395523825664 |