Charge characteristics of the MOS structures with oxide films containing Si nanocrystals
The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of structures with the different thicknesses of films,...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117892 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Charge characteristics of the MOS structures with oxide films containing Si nanocrystals / Е.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 46-50. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117892 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1178922017-05-28T03:03:27Z Charge characteristics of the MOS structures with oxide films containing Si nanocrystals Begun, E.V. Bratus’, O.L. Evtukh, A.A. Kaganovich, E.B. Manoilov, E.G. The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of structures with the different thicknesses of films, sizes of Si nanocrystals, and their densities in the case of doping the films with gold and without it are measured. It is shown that the positive and negative charges are built-in, respectively, in the undoped films and those doped with gold. At the record of C-V curves, the accumulation of a positive charge is observed. The value of accumulated charge is higher in thin films and in the films doped with gold. The obtained results testify the possibility of the use of pulsed laser deposition for creation of memory structures based on the charge capture by Si nanocrystals. 2007 Article Charge characteristics of the MOS structures with oxide films containing Si nanocrystals / Е.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 46-50. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.72.Tt, 84.37.+q, 85.35.Be http://dspace.nbuv.gov.ua/handle/123456789/117892 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The processes of charge accumulation in the MOS structures with SiO₂ films
containing Si nanocrystals are investigated, depending on the conditions of their
formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of
structures with the different thicknesses of films, sizes of Si nanocrystals, and their
densities in the case of doping the films with gold and without it are measured. It is
shown that the positive and negative charges are built-in, respectively, in the undoped
films and those doped with gold. At the record of C-V curves, the accumulation of a
positive charge is observed. The value of accumulated charge is higher in thin films and
in the films doped with gold. The obtained results testify the possibility of the use of
pulsed laser deposition for creation of memory structures based on the charge capture by
Si nanocrystals. |
| format |
Article |
| author |
Begun, E.V. Bratus’, O.L. Evtukh, A.A. Kaganovich, E.B. Manoilov, E.G. |
| spellingShingle |
Begun, E.V. Bratus’, O.L. Evtukh, A.A. Kaganovich, E.B. Manoilov, E.G. Charge characteristics of the MOS structures with oxide films containing Si nanocrystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Begun, E.V. Bratus’, O.L. Evtukh, A.A. Kaganovich, E.B. Manoilov, E.G. |
| author_sort |
Begun, E.V. |
| title |
Charge characteristics of the MOS structures with oxide films containing Si nanocrystals |
| title_short |
Charge characteristics of the MOS structures with oxide films containing Si nanocrystals |
| title_full |
Charge characteristics of the MOS structures with oxide films containing Si nanocrystals |
| title_fullStr |
Charge characteristics of the MOS structures with oxide films containing Si nanocrystals |
| title_full_unstemmed |
Charge characteristics of the MOS structures with oxide films containing Si nanocrystals |
| title_sort |
charge characteristics of the mos structures with oxide films containing si nanocrystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117892 |
| citation_txt |
Charge characteristics of the MOS structures with oxide films containing Si nanocrystals / Е.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 46-50. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:30:52Z |
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