Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum tran...

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Бібліографічні деталі
Дата:2003
Автори: Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117939
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1179392017-05-28T03:03:07Z Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals Budzulyak, S.I. Ermakov, V.M. Kyjak, B.R. Kolomoets, V.V. Machulin, V.F. Novoselets, M.K. Panasjuk, L.I. Sus', B.B. Venger, E.F. Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified. 2003 Article Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 71.30.+h http://dspace.nbuv.gov.ua/handle/123456789/117939 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.
format Article
author Budzulyak, S.I.
Ermakov, V.M.
Kyjak, B.R.
Kolomoets, V.V.
Machulin, V.F.
Novoselets, M.K.
Panasjuk, L.I.
Sus', B.B.
Venger, E.F.
spellingShingle Budzulyak, S.I.
Ermakov, V.M.
Kyjak, B.R.
Kolomoets, V.V.
Machulin, V.F.
Novoselets, M.K.
Panasjuk, L.I.
Sus', B.B.
Venger, E.F.
Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Budzulyak, S.I.
Ermakov, V.M.
Kyjak, B.R.
Kolomoets, V.V.
Machulin, V.F.
Novoselets, M.K.
Panasjuk, L.I.
Sus', B.B.
Venger, E.F.
author_sort Budzulyak, S.I.
title Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
title_short Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
title_full Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
title_fullStr Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
title_full_unstemmed Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
title_sort investigations of physical mechanisms of metal-insulator transition in highly strained n-si and n-ge crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/117939
citation_txt Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:30:57Z
last_indexed 2023-10-18T20:30:57Z
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