Determination of surface parameters of solids by methods of X-ray total external reflection
The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by...
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Дата: | 2003 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117940 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1179402017-05-28T03:03:07Z Determination of surface parameters of solids by methods of X-ray total external reflection Balovsyak, S.V. Fodchuk, I.M. Lytvyn, P.M. The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored. 2003 Article Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 61.10.Kw, 61.43.Hv, 68.35.-p http://dspace.nbuv.gov.ua/handle/123456789/117940 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored. |
format |
Article |
author |
Balovsyak, S.V. Fodchuk, I.M. Lytvyn, P.M. |
spellingShingle |
Balovsyak, S.V. Fodchuk, I.M. Lytvyn, P.M. Determination of surface parameters of solids by methods of X-ray total external reflection Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Balovsyak, S.V. Fodchuk, I.M. Lytvyn, P.M. |
author_sort |
Balovsyak, S.V. |
title |
Determination of surface parameters of solids by methods of X-ray total external reflection |
title_short |
Determination of surface parameters of solids by methods of X-ray total external reflection |
title_full |
Determination of surface parameters of solids by methods of X-ray total external reflection |
title_fullStr |
Determination of surface parameters of solids by methods of X-ray total external reflection |
title_full_unstemmed |
Determination of surface parameters of solids by methods of X-ray total external reflection |
title_sort |
determination of surface parameters of solids by methods of x-ray total external reflection |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2003 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/117940 |
citation_txt |
Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT balovsyaksv determinationofsurfaceparametersofsolidsbymethodsofxraytotalexternalreflection AT fodchukim determinationofsurfaceparametersofsolidsbymethodsofxraytotalexternalreflection AT lytvynpm determinationofsurfaceparametersofsolidsbymethodsofxraytotalexternalreflection |
first_indexed |
2023-10-18T20:30:58Z |
last_indexed |
2023-10-18T20:30:58Z |
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1796150403523411968 |