2025-02-22T21:39:49-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118002%22&qt=morelikethis&rows=5
2025-02-22T21:39:49-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118002%22&qt=morelikethis&rows=5
2025-02-22T21:39:49-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T21:39:49-05:00 DEBUG: Deserialized SOLR response
Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors
To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon diode temperature sensors (DTSs) is proposed. The observed nonmonotonic depe...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118002 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|