Role of silicon oxide defects in emission process of Si-SiO₂ systems
Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperatur...
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| Дата: | 2003 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118036 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1180362017-05-29T03:03:19Z Role of silicon oxide defects in emission process of Si-SiO₂ systems Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperature annealing in oxygen atmosphere lead to the increase of infrared band intensity and the appearance of additional bands with maxima at 1.7 eV, 2.06 eV and 2.3 eV while annealing in hydrogen atmosphere results in the decrease of 1.7 eV and 2.06 eV band intensities. The decrease of crystallite sizes results in high-energy shift of infrared band while the peak positions of another ones (at 1.7, 2.06 and 2.3 eV) do not change. It is concluded that infrared band is connected with Si crystallites while another ones can be ascribed to silicon oxide defects, 1.7 and 2.06 eV bands being ascribed to oxygen-excess defects such as EX- and non-bridging oxygen hole centres. 2003 Article Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 61.46.+w; 61.72.Hh; 78.55-m; 78.66-w http://dspace.nbuv.gov.ua/handle/123456789/118036 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad infrared band. It is shown that one-year aging in ambient air and low-temperature annealing in oxygen atmosphere lead to the increase of infrared band intensity and the appearance of additional bands with maxima at 1.7 eV, 2.06 eV and 2.3 eV while annealing in hydrogen atmosphere results in the decrease of 1.7 eV and 2.06 eV band intensities. The decrease of crystallite sizes results in high-energy shift of infrared band while the peak positions of another ones (at 1.7, 2.06 and 2.3 eV) do not change. It is concluded that infrared band is connected with Si crystallites while another ones can be ascribed to silicon oxide defects, 1.7 and 2.06 eV bands being ascribed to oxygen-excess defects such as EX- and non-bridging oxygen hole centres. |
| format |
Article |
| author |
Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. |
| spellingShingle |
Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. Role of silicon oxide defects in emission process of Si-SiO₂ systems Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Baran, M. Bulakh, B. Korsunska, N. Khomenkova, L. Yukhymchuk, V. Sheinkman, M. |
| author_sort |
Baran, M. |
| title |
Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_short |
Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_full |
Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_fullStr |
Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_full_unstemmed |
Role of silicon oxide defects in emission process of Si-SiO₂ systems |
| title_sort |
role of silicon oxide defects in emission process of si-sio₂ systems |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118036 |
| citation_txt |
Role of silicon oxide defects in emission process of Si-SiO₂ systems / M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova, V. Yukhymchuk, M. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 282-286. — Бібліогр.: 23 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT baranm roleofsiliconoxidedefectsinemissionprocessofsisio2systems AT bulakhb roleofsiliconoxidedefectsinemissionprocessofsisio2systems AT korsunskan roleofsiliconoxidedefectsinemissionprocessofsisio2systems AT khomenkoval roleofsiliconoxidedefectsinemissionprocessofsisio2systems AT yukhymchukv roleofsiliconoxidedefectsinemissionprocessofsisio2systems AT sheinkmanm roleofsiliconoxidedefectsinemissionprocessofsisio2systems |
| first_indexed |
2023-10-18T20:31:11Z |
| last_indexed |
2023-10-18T20:31:11Z |
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