Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The...

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Дата:2004
Автори: Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118106
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons / A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 8-15. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118106
record_format dspace
spelling irk-123456789-1181062017-05-29T03:03:45Z Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons Dolgolenko, A.P. Litovchenko, P.G. Litovchenko, A.P. Varentsov, M.D. Lastovetsky, V.F. Gaidar, G.P. Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The radiation hardness of n-type silicon is shown to be determined first of all by the introduction rate of defect clusters and their parameters and then by the introduction rate of defects into the conducting n-Si matrix. The presence of oxygen, argon atoms and A-type defects (dislocation loops of the interstitial type) mainly increases the radiation hardness of n-Si. The effective concentration of carriers in irradiated silicon was calculated in the framework of Gossick's model taking into account the recharges of defects both in the conducting matrix of n-Si and in the space-charge regions of defect clusters. Grown by the method of the floating-zone melting in argon atmosphere the neutron-transmutation- doped silicon (NTD) has elevated radiation hardness. The introduction rate of divacancies in the conducting matrix of n-Si (NTD) is about five times less than in n-Si (FZ) and ~2 times less than in n-Si (Ar). The availability of the deformation strain field surrounding the argon-type impurities as well as A-type defects is supposed to promote the annihilation of divacancies with interstitial atoms of silicon. 2004 Article Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons / A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 8-15. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 61.72.Ji; 61.80.Hg; 71.55.Cn; 72.20.Jv; S5.11 http://dspace.nbuv.gov.ua/handle/123456789/118106 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The radiation hardness of n-type silicon is shown to be determined first of all by the introduction rate of defect clusters and their parameters and then by the introduction rate of defects into the conducting n-Si matrix. The presence of oxygen, argon atoms and A-type defects (dislocation loops of the interstitial type) mainly increases the radiation hardness of n-Si. The effective concentration of carriers in irradiated silicon was calculated in the framework of Gossick's model taking into account the recharges of defects both in the conducting matrix of n-Si and in the space-charge regions of defect clusters. Grown by the method of the floating-zone melting in argon atmosphere the neutron-transmutation- doped silicon (NTD) has elevated radiation hardness. The introduction rate of divacancies in the conducting matrix of n-Si (NTD) is about five times less than in n-Si (FZ) and ~2 times less than in n-Si (Ar). The availability of the deformation strain field surrounding the argon-type impurities as well as A-type defects is supposed to promote the annihilation of divacancies with interstitial atoms of silicon.
format Article
author Dolgolenko, A.P.
Litovchenko, P.G.
Litovchenko, A.P.
Varentsov, M.D.
Lastovetsky, V.F.
Gaidar, G.P.
spellingShingle Dolgolenko, A.P.
Litovchenko, P.G.
Litovchenko, A.P.
Varentsov, M.D.
Lastovetsky, V.F.
Gaidar, G.P.
Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Dolgolenko, A.P.
Litovchenko, P.G.
Litovchenko, A.P.
Varentsov, M.D.
Lastovetsky, V.F.
Gaidar, G.P.
author_sort Dolgolenko, A.P.
title Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
title_short Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
title_full Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
title_fullStr Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
title_full_unstemmed Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons
title_sort influence of growing and doping methods on radiation hardness of n-si irradiated by fast-pile neutrons
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/118106
citation_txt Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons / A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 8-15. — Бібліогр.: 23 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:21Z
last_indexed 2023-10-18T20:31:21Z
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