Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

• Дата: 2004
• Автори: Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118106
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons / A.P. Dolgolenko, P.G. Litovchenko, A.P. Litovchenko, M.D. Varentsov, V.F. Lastovetsky, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 8-15. — Бібліогр.: 23 назв. — англ.

Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The...