Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, the operating signal of d...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118120 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118120 |
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dspace |
| spelling |
irk-123456789-1181202017-05-29T03:05:27Z Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop across the diode during the passage of a constant current, T is the temperature) reproduces the Mott law (with opposite sign in the exponent), and the temperature sensitivity of such sensors after passing through a minimum (as the temperature is lowered) increases again up to the values typical of room temperature 2007 Article Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 07.07.Df, 61.72.Tt, 72.20.-I, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118120 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott
temperature dependence of the forward current in a certain range of bias voltages and
low temperatures have studied from the point of their use as temperature sensors. In the
region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop
across the diode during the passage of a constant current, T is the temperature)
reproduces the Mott law (with opposite sign in the exponent), and the temperature
sensitivity of such sensors after passing through a minimum (as the temperature is
lowered) increases again up to the values typical of room temperature |
| format |
Article |
| author |
Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| spellingShingle |
Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borblik, V.L. Shwarts, Yu.M. Shwarts, M.M. |
| author_sort |
Borblik, V.L. |
| title |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_short |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_full |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_fullStr |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_full_unstemmed |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region |
| title_sort |
characteristics of diode temperature sensors which exhibit mott conduction in low temperature region |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118120 |
| citation_txt |
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 44-47. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT borblikvl characteristicsofdiodetemperaturesensorswhichexhibitmottconductioninlowtemperatureregion AT shwartsyum characteristicsofdiodetemperaturesensorswhichexhibitmottconductioninlowtemperatureregion AT shwartsmm characteristicsofdiodetemperaturesensorswhichexhibitmottconductioninlowtemperatureregion |
| first_indexed |
2023-10-18T20:31:23Z |
| last_indexed |
2023-10-18T20:31:23Z |
| _version_ |
1796150422055944192 |