An improved contribution to optimize Si and GaAs solar cell performances
In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an...
Збережено в:
| Дата: | 2004 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118145 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118145 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1181452017-05-29T03:05:39Z An improved contribution to optimize Si and GaAs solar cell performances Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials. 2004 Article An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 84.60.Jt http://dspace.nbuv.gov.ua/handle/123456789/118145 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials. |
| format |
Article |
| author |
Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. |
| spellingShingle |
Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. An improved contribution to optimize Si and GaAs solar cell performances Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. |
| author_sort |
Merabtine, N. |
| title |
An improved contribution to optimize Si and GaAs solar cell performances |
| title_short |
An improved contribution to optimize Si and GaAs solar cell performances |
| title_full |
An improved contribution to optimize Si and GaAs solar cell performances |
| title_fullStr |
An improved contribution to optimize Si and GaAs solar cell performances |
| title_full_unstemmed |
An improved contribution to optimize Si and GaAs solar cell performances |
| title_sort |
improved contribution to optimize si and gaas solar cell performances |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118145 |
| citation_txt |
An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT merabtinen animprovedcontributiontooptimizesiandgaassolarcellperformances AT amouraches animprovedcontributiontooptimizesiandgaassolarcellperformances AT bouaouinam animprovedcontributiontooptimizesiandgaassolarcellperformances AT zaabatm animprovedcontributiontooptimizesiandgaassolarcellperformances AT saidiy animprovedcontributiontooptimizesiandgaassolarcellperformances AT kenzaic animprovedcontributiontooptimizesiandgaassolarcellperformances AT merabtinen improvedcontributiontooptimizesiandgaassolarcellperformances AT amouraches improvedcontributiontooptimizesiandgaassolarcellperformances AT bouaouinam improvedcontributiontooptimizesiandgaassolarcellperformances AT zaabatm improvedcontributiontooptimizesiandgaassolarcellperformances AT saidiy improvedcontributiontooptimizesiandgaassolarcellperformances AT kenzaic improvedcontributiontooptimizesiandgaassolarcellperformances |
| first_indexed |
2023-10-18T20:31:27Z |
| last_indexed |
2023-10-18T20:31:27Z |
| _version_ |
1796150424919605248 |